GAS PHASE EPITAXIAL GROWING METHOD,申请号JP19960045687-传众专利搜索

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发明名称	GAS PHASE EPITAXIAL GROWING METHOD
摘要
申请公布号	JPH09246188(A)	申请公布日期	1997.09.19
申请号	JP19960045687	申请日期	1996.03.04
申请人	HITACHI CABLE LTD	发明人	MEGURO TAKESHI
分类号	C30B29/40;C30B31/16;H01L21/205;(IPC1-7):H01L21/205	主分类号	C30B29/40
代理机构		代理人
主权项
地址

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