发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To lower current consumption of a boosting power source generation circuit for output while the boosting power source for output is supplied stably under the optimum electric charge capacity. SOLUTION: A VPPO generation circuit 132 which outputs a boosting power source VPPO to be utilized for the driving of a transistor for outputting H level data contained in an output buffer circuit 128 is made active by a VPPO control circuit 130 only during the operation of reading data. Only when necessary, the VPPD generation circuit 132 is operated thereby lowering power consumption in the circuit.
申请公布号 JPH09245476(A) 申请公布日期 1997.09.19
申请号 JP19960047282 申请日期 1996.03.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 SAWADA SEIJI
分类号 G11C11/407;G11C11/409 主分类号 G11C11/407
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