发明名称 Method of forming array of light active cells and array
摘要 <p>An array is fabricated in which a cell's dark matrix (54) overlaps its cell electrode (50) so that the overlap areas (62, 64) and the dielectric material between them (66) form a storage capacitor (60). Each cell's dark matrix can overlap the cell's electrode around its perimeter, and the overlap areas of the dark matrix and the electrode can be sufficiently large and the dielectric layer between them can be sufficiently thin that the storage capacitor they form meets the cell's requirements. The dark matrix can be over the cell electrode, with scan lines and data lines in a series of lower layers, or the dark matrix can be below the series of layers that includes scan lines and data lines, with the cell electrode in an opening defined in the series of layers. The dark matrix layer can be electrically connected to a fixed potential. <IMAGE></p>
申请公布号 EP0782035(A1) 申请公布日期 1997.07.02
申请号 EP19960309521 申请日期 1996.12.27
申请人 XEROX CORPORATION 发明人 WEISFIELD, RICHARD L.;HACK, MICHAEL G.;LEVINE, JOEL
分类号 G02B5/00;G02F1/1335;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/133 主分类号 G02B5/00
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