| 摘要 |
A semiconductor device sealed with mold resin (9) is disclosed. The device includes a semiconductor substrate (1) having a main surface and an element (2) formed on the main surface of the semiconductor substrate (1). A stress buffering film (6) for protecting at least the element (2) from stress of the mold resin (9) is provided on the semiconductor substrate (1) so as to cover at least the element (2). The entire semiconductor device is covered and sealed with mold resin (9). The stress buffering film (6) is formed of organo-silicone ladder polymer having a hydroxyl group at its end. In the semiconductor device, water does not get into an interface of the stress buffering film (6) and the underlying substrate (1), resulting in an enhancement of the moisture resistance of the semiconductor device. <IMAGE> |
