发明名称 ALIGNMENT MARKING METHOD AND MAKING POSITION CHECK METHOD
摘要 <p>PROBLEM TO BE SOLVED: To movement deviation from occurring in the position of a buried layer true pattern from an impurity layer true pattern by aligning an angular pattern of an epitaxial layer surface alignment pattern with an angular pattern of a mask alignment for the epitaxial layer surface. SOLUTION: A base layer alignment pattern 27 formed by a base layer mask alignment pattern is epitaxially grown and then transferred to the surface of an epitaxial layer 28 as an epitaxial layer surface alignment pattern 30 offset by a distance x in the X-direction from the center. Since the position of the apex 30c of an angular pattern 30d hardly receives the effect of the pattern distortion phenomenon, an angular pattern 32 is superimposed on the pattern 30d so as to align the upper and lower apexes 32c align with a line passing the upper and lower apexes 30c of the pattern 30d. Thereby this method prevents a true pattern of buried layer from the positional deviation from an impurity layer.</p>
申请公布号 JPH09129711(A) 申请公布日期 1997.05.16
申请号 JP19950282808 申请日期 1995.10.31
申请人 NEC KANSAI LTD 发明人 SUMIDA WATARU
分类号 H01L21/66;H01L21/027;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/66
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