Flash EEPROM cell and manufacturing methods thereof

摘要

This invention relates to a flash EEPROM(Electrically Erasable Programmable Read-Only Memory) cell, more particularly to the cell having an inverter structure with an n-channel part and a p-channel part which hold a floating gate in common, in which the floating gate is charged with hot electrons produced in the n-channel part in programming and the floating gate is neutralized or inverted with hot holes produced in the p-channel part in erasing.