| 摘要 |
PROBLEM TO BE SOLVED: To obtain an SRAM cell having a small surface and constituted in a simple layout by forming active areas in an L-shape, inverted L-shape, and shapes which are close to the mirror images of the L- and inverted L-shapes and gate wiring perpendicularly to the horizontal sections of the active areas. SOLUTION: A third active area 84c formed on the left side of a P-wall 80 of an inverted L-shape has a first pull-down transistor forming region T3 formed in the transversal direction from the P-well 80, a first pass transistor forming region T5 formed in the longitudinal direction from the well 80, a first N-type node N1 which is formed between the regions T3 and T5, and a first Vss contact region S1 on the left-side of the region T3. A fourth active region 84d is formed on the right side of a P-well 84 and has the same shape as the mirror image of the third active 84c. A first active region 84a is formed on the left side of an N-well 78 in an L-shape and a second active region 84b has the same shape as the mirror image of the first active region 84a. |
