An apparatus for manufacturing a nitrogen-containing compound thin film

摘要

An apparatus for forming a II-VI Group compound thin film containing nitrogen as an impurity, on a substrate, comprises a container for holding a substrate a vapor source for supplying Zn vapor on a surface of the substrate, a vapor source for supplying Se vapor on the surface of the substrate, and a discharge tube (20) into which a nitrogen gas is introduced (21), having three-divided internal portions (100,200,300), a high-pressure portion (100), a middle-pressure portion (200), and a low-pressure portion (300) from the gas introduction side, and supplying excitation species derived from discharge plasma generated in the low-pressure portion onto the surface of the substrate. Zn vapor and Se vapor are alternately supplied, and supply of nitrogen excitation species is performed in synchronous with supply of Zn vapor.