| 摘要 |
PURPOSE: To improve the stability in light emission of a group III nitride semiconductor light emitting element. CONSTITUTION: In a light emitting element, which has at least an n conductivity type of n layer and a p conductivity type of p layer consisting of group III nitride semiconductor (AlXGay In1- X- YN; X=0, Y=0, X=Y=0), an aluminum(Al) layer 81 to join with an n layer 8, a titanium(Ti) layer 82 positioned thereon, and a gold (Au) layer 83 positioned thereon are made as the electrode 8 of the n layer 3. |
