Switch with a first switching element in the form of a bipolar transistor

摘要

A switch is described with a bipolar transistor as first switching element having a high breakdown voltage when operated in the reverse direction. This can be accomplished by a second switching element provided in the switch, a switching transistor, e.g. an MOS transistor, through which the base and the collector of the bipolar transistor are joined together, is activated in the reverse mode of the switch, i.e. when the bipolar transistor is in inverse mode, in such a way that the second switching element becomes conductive. The collector-emitter breakdown voltage of the bipolar transistor, i.e. its maximum permissible collector-emitter voltage, is thus brought closer to its higher base-emitter breakdown voltage.