Light emitting diode with current blocking layer

摘要

A light emitting diode includes a first conductivity type GaAs substrate having a second conductivity type region as a current blocking layer. A first conductivity type distributed Bragg reflector layer is formed on the GaAs substrate. An AlGaInP double heterostructure including a lower cladding AlGaInP layer of the first conductivity type, an undoped active AlGaInP layer, and an upper cladding AlGaInP layer of the second conductivity type is grown on top of the distributed Bragg reflector layer. The undoped active AlGaInP layer can also be replaced by a multi-layer quantum well structure of AlGaInP or a strained multi-layer quantum well structure of AlGaInP. A second conductivity type layer of low energy band gap and high conductivity material is formed on the AlGaInP double heterostructure. A GaP window layer of the second conductivity type is then formed on top of the low energy band gap layer.