| 发明名称 |
Photoresist having a low level of metal ions |
| 摘要 |
The present invention provides methods for producing photoresist compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such photoresist compositions.
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| 申请公布号 |
US5543263(A) |
申请公布日期 |
1996.08.06 |
| 申请号 |
US19940261646 |
申请日期 |
1994.06.17 |
| 申请人 |
HOECHST CELANESE CORPORATION |
发明人 |
RAHMAN, M. DALIL;DURHAM, DANA L. |
| 分类号 |
B01D15/00;B01D15/04;B01J39/04;G03F7/004;G03F7/023;G03F7/38;(IPC1-7):G03C5/18 |
主分类号 |
B01D15/00 |
| 代理机构 |
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