Method for analyzing the defectiveness of semiconductor device

摘要

The method for analyzing defects in a semiconductor device comprises the steps of: removing upper layers covering an analysis objective portion in a testing sample; etching neighboring layers surrounding the analysis objective portion using materials having an appropriate etching selection ratio, to expose the analysis objective portion; observing the sample relating to the analysis objective portion with a scanning electron microscope, the sample being set on a holder of the scanning electro microscope and being changed in tilt and rotational angle, whereby the sample can be examined in three dimensions. The method takes advantage of chemical properties, so that a defective part of a semiconductor can be analyzed rapidly and economically. In addition, the method overcomes a problem which can not be solved with the conventional analyzing method, such that observation can be accurately performed in any desired direction. As a results, the method is superior in accuracy and can be applied to a device on the basis of such advantage, so there is brought about an effect that three dimensional analysis is possible in observing the sample in spite of different conditions.