| 摘要 |
PURPOSE: To provide a GaAlAs epitaxial wafer for LED which has a long life under the low-temperature environment and a LED by specifying the thickness of a p-type GaAs substrate on which a p-type GaAlAs clad layer, a p-type GaAlAs active layer, and an n-type GaAlAs clad layer are deposited in order. CONSTITUTION: On a p-type GaAs substrate 1 150-210μm thick, an epitaxial layer of a double-heterostructure constituted of a p-type GaAlAs clad layer 2, a p-type GaAlAs active layer 3, and an n-type GaAlAs clad layer 4 are grown by a liquid-phase epitaxial growth method. The p-type GaAlAs clad layer 2 has a mole fraction 0.65 for Al and is 20μm thick and the p-type GaAlAs active layer 3 has a mole fraction 0.35 for Al and is 1μm thick and the n-type GaAlAs clad layer 4 has a mole fraction 0.6 for Al and is 40μm thick. This GaAlAs epitaxial wafer for LED is provided with an upper and a lower electrode 5, 6 and then is made into a chip and is connected to a stem 7 and is coated with resin to be made a LED. |
