发明名称 Integrated semiconductor memory device capable of switching from a memory mode to an internal test mode
摘要 A semiconductor memory is subdivided into a plurality of function units and has m leads addressable from outside, internal signal lines leading from the function units to the leads, internal signal lines connecting the function units with one another, and a test unit recognizing a test mode from a code word applied to k leads, where k</=m. A device switches over from a memory mode to the test mode. The test unit decouples at least one of the signal lines leading to the leads from an associated lead of the semiconductor memory and connects the lead to an internal signal line connecting the function units.
申请公布号 US5497350(A) 申请公布日期 1996.03.05
申请号 US19940366361 申请日期 1994.12.29
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 MUHMENTHALER, PETER;OBERLE, HANS-DIETER
分类号 G01R31/28;G11C29/12;G11C29/14;(IPC1-7):G11C7/00;G11C29/00 主分类号 G01R31/28
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