Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung

摘要

The invention proposes a lateral semiconductor structure with a punchthrough diode and designed to produce a temperature-compensated voltage limitation, the structure having a lateral assembly of preferably annular regions (7) disposed round a base well (3) in order to reduce the space-charge resistance. This is achieved by virtue of the fact that the preferably annular regions (7) have a particular doping level and are located a particular distance from the base well (3). Use of the punchthrough and avalanche effect ensures a higher breakdown voltage since the space-charge resistance is reduced by the structure proposed.