| 摘要 |
PURPOSE: To enhance the diffusion of a diode current by forming a first window layer on an upper limit layer, forming a second window layer on the first window layer, and providing another electrode formed on the second window layer. CONSTITUTION: In a light-emitting diode, on a GaAs substrate 7, an N-type AlGaInP lower limit layer 6 is deposited, and a neutral AlGaInP active layer 5 is deposited over it, and further, a p-type AlGaInP upper limit layer 4 is deposited. Then, a first window layer 3 of small potential is deposited on the p-type AlGaInP upper limit layer 4. Further, the second window layer 2 of a large potential is deposited directly on the first window layer 3. Lastly, a negative electrode layer 8 is vapor-deposited on the back side of the GaAs substrate 7, while a positive electrode layer 1 is vapor-deposited on the upper surface of the second window layer. Thus, the diffuison of electric current is enhanced for enhancing the light-emitting efficiency. |
