CONTACT CONNECTING METHOD

摘要

The contact connecting method comprises the steps of forming an insulating separation oxide layer over a semiconductor substrate to forming an operation region and an insulating separation region and forming a contact hole greater than the operation region by using a photosensitive layer; ion-implanting impurity to the contact hole to form a first diffusion region; and depositing an interlayer insulating layer over the whole surface of the contact hole to form again a contact hole and depositing conductive material thereover.