发明名称 |
Micro mask comprising agglomerated material |
摘要 |
The subject invention provides a method of forming recesses in a substrate such as a capacitor so as to increase the surface area thereof and therefore the charge storage capacity of the capacitor. This is accomplished by utilizing a micro mask formed by agglomeration on the surface of the substrate. The agglomerated material, such as gold, titanium nitride or titanium silicide, is used as a mask for selectively etching the substrate to form recesses therein. Alternatively, an oxide transfer mask can be utilized with the agglomerated material micro mask to etch the substrate.
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申请公布号 |
US5466626(A) |
申请公布日期 |
1995.11.14 |
申请号 |
US19930168703 |
申请日期 |
1993.12.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARMACOST, MICHAEL;BAKER, JR., A. RICHARD;BERRY, WAYNE S.;CARL, DANIEL A.;KENNEY, DONALD M.;LICATA, THOMAS J. |
分类号 |
H01L21/02;H01L21/033;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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