THIN FILM STRUCTURE AND THIN-FILM-STRUCTURE FORMATION

摘要

PURPOSE: To provide a thin-film structure to which sufficient etchability and electrical conductivity are imparted by conductive lines consisting of molybdenum and chromium. CONSTITUTION: First and second sub-layers 232, 234 are formed by using PVD and are combined to form a molybdenum-chromium layer. The patterns of a mask material are formed by executing lithography. The regions not coated with the patterns of the mask material are removed by carrying out etching. The conductive lines 230 contg. the molybdenum and the chromium are formed at the molybdenum-chromium layer of the parts covered and patterned. Further, tapered edges 236, 238 are formed on the conductive lines by etching and the patterns of the mask material are removed from the conductive lines 230.