| 摘要 |
<p>PURPOSE:To provide a polycrystalline silicon device which is improved in characteristics such as photoelectric conversion efficiency and others at a low cost by a method wherein a polycrystalline silicon layer is kept free from defects. CONSTITUTION:A polycrystalline silicon layer 4 is deposited on a substrate 1 of material different from crystalline silicon for the formation of a polycrystalline silicon device, wherein an amorphous silicon layer 3 is interposed between the substrate and the polycrystalline silicon layer 4.</p> |
