| 摘要 |
<p>PURPOSE: To provide an integrated circuit for programming memory cell in a non-volatile memory register while simplifying configuration and reducing the area to be occupied. CONSTITUTION: Concerning the integrated circuit for programming memory cell in the non-volatile memory register, a memory cell has a control electrode and a supply electrode, and one programmable non-volatile memory cell TF suitable for storing the information of one bit at least and a load circuit LC for reading the information stored in this memory cell are provided. The integrated circuit is provided with a switching means TS serially connected between the supply electrode of the memory cell TF and each data line A for conveying data to be programmed into the memory cell. When programming the memory cell in the non-volatile memory register, this switching means is controlled by a signal 7 for electrically connecting the memory cell TF to the data line A. The data line A is defined as the address signal line of an address signal bus to be used for the decoder circuit of memory matrix as well.</p> |
