| 摘要 |
A plurality of memory cells are formed on a semiconductor substrate. Each memory cell contains a first gate insulating film formed on the semiconductor substrate, a floating gate formed on the first gate insulating film, a second gate insulating film formed on the floating gate, a control gate formed on the second gate insulating film, and a source and a drain region formed in the semiconductor substrate on both sides of the floating gate, respectively. The source regions of the memory cells are connected with a plurality of common source lines. At least the surface of these source regions in the vicinity of the ends of the floating gate are made flush with the surface of the semiconductor substrate under the floating gate.
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