| 摘要 |
<p>A method for forming a contact window in an oxide layer formed on a semiconductor substrate is disclosed. The method comprises the steps of: implanting a dopant into the oxide layer, followed by isotropic and anisotropic etching of a window area of the oxide. The steps form. the contact window in the oxide layer at the window area permitting a sub-micron linewidth contact layer to be formed within the contact window. The invention avoids the formation of re-entrant window wall edges in the oxide layer.</p> |
