| 发明名称 |
METHOD FOR FORMING GESI/SI/SIO2 HETERO STRUCTURE AND SIMOX DEVICE AND INTEGRATED CIRCUIT WITH ITS STRUCTURE |
| 摘要 |
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| 申请公布号 |
JPH07142742(A) |
申请公布日期 |
1995.06.02 |
| 申请号 |
JP19940122561 |
申请日期 |
1994.06.03 |
| 申请人 |
SHARP CORP;SHARP MICROELECTRON TECHNOL INC |
发明人 |
NAKATO TATSURO |
| 分类号 |
H01L21/762;H01L21/20;H01L21/265;H01L21/335;H01L21/336;H01L21/76;H01L21/84;H01L27/12;H01L29/78;H01L29/786;H01L29/80;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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