Process and device for etching thin layers, preferably Indium-Tin-Oxide layers.

摘要

In the case of a device for etching thin films (layers), preferably indium-tin-oxide films on glass substrates in a vacuum chamber (2), with a plasma source (12) arranged above the latter, a substrate holder (5) located opposite this plasma source and having a high-frequency source (8) connected to the substrate holder (5), the etching gas Cl2 or Cl2 and H2 or CH4 can be let into the vacuum chamber (2), the high-frequency bias supply (8, 9) of the substrate holder (5) being adjustable independently of the etching particle density, and the plasma source (12) being supplied by a separate high-frequency source (16) which has its own matching network (17).