发明名称 |
Magnetic multilayer and magnetoresistance effect element. |
摘要 |
A magnetic multilayer is an alternate stack of a plurality of magnetic thin films containing Fe, Co or Ni and a plurality of Ag thin film. Both the films are formed by molecular beam epitaxy to a thickness of 2 to 60 ANGSTROM . The multilayer has an axis of easy magnetization in a plane parallel to the surface and an in-plane squareness ratio of 0.5 or lower and exhibits antiferromagnetism. The multilayer shows giant magnetoresistance change in low magnetic fields, for example, a magnetoresistance change of 1 to 40% in a magnetic field of 0.01 to 20 kOe. |
申请公布号 |
EP0504473(B1) |
申请公布日期 |
1995.03.15 |
申请号 |
EP19910113878 |
申请日期 |
1991.08.19 |
申请人 |
TDK CORPORATION |
发明人 |
ARAKI, SATORU, C/O TDK CORPORATION;YASUI, KIYOMI, C/O TDK CORPORATION;NARUMIYA, YOSHIKAZU, C/O TDK CORPORTATION |
分类号 |
H01F10/00;G01R33/09;H01F10/08;H01F10/32;H01L43/10;(IPC1-7):H01F10/08 |
主分类号 |
H01F10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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