| 摘要 |
PURPOSE:To obtain a stable solution quickly in a numerical analysis of semiconductor elements. CONSTITUTION:This device is provided with a calculation part 13 based on a decoupled method and a calculation part 17 based on a Newton method and has a change over part 18 which changes over the two calculation parts in automatic mode. In the calculation part 13, a calculation part 14, which solves a Poison equation, an electron and electric current continuous equation and a hole current continuous equation, determines potential, electron concentration and hole concentration while a carrier temperature prediction part 15 provides an initial value of a carrier temperature and a calculation part 16 which solves electron energy conservation law, hole energy conservation law, calculates electron temperature and hole temperature. The calculation part 17 solves the Poison equation, the electron continuous equation, the hole current continuous equation, the electron energy conservation law and the hole energy conservation law based on the Newton method and determines everything about the potential, the electron concentration, the electron concentration and the hole temperature. |
