MANUFACTURING METHOD FOR ELEMENTS SEGREGATION OF SEMICONDUCTOR DEVICE

摘要

The method is for isolating N/P-channel device in an integrated circuit (IC). The method comprises the steps of: (a) removing netrogenous layer on a field region; (b) forming a netrogenous thin film and thermal oxide layer sequentially; (c) forming thermal oxide spacer on both sides of the field region; (d) removing the netrogenous thin film, pad oxide layer on field region and etching silicon substrate; (e) removing the thermal oxide layer spacer, forming a damage cure oxide layer and forming a netrogenous spacer; and (f) oxidizing the field region.