MANUFACTURE OF SCHOTTKY BARRIER SEMICONDUCTOR DEVICE

摘要

PURPOSE:To rationally manufacture a Schottky barrier semiconductor device where an insulating or a high resistance buffer film is provided between an anode electrode and a semiconductor conductive layer. CONSTITUTION:An ohmic contact metal film 4 is patterned on the surface of n<->-GaAs layer 2b formed on a n<+>-GaAs layer 2a and a projected area 3 is formed by etching the n<+>-GaAs layer 2b using the ohmic contact metal film 4 as a mask. A buffer film 8 is formed on the entire surface of the n<->-GaAs layer from above the ohmic contact metal film 11 and an etching adjustment layer 9 is formed on the buffer film 8 with the surface subjected to planarization. The buffer film 8 and etching adjustment layer 9 are etched with the etching ratio of 1:1, leaving the buffer layer 8 only at the bottom surface of the region except for the projected area 3. Thereafter, the Schottky contact metal film 5 is deposited to the region including the projected area 8 of the n<->-GaAs layer 2b in order to form an anode electrode.