MANUFACTURE OF INSULATED GATE FIELD EFFECT TRANSISTOR,申请号JP19920013541-传众专利搜索

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发明名称	MANUFACTURE OF INSULATED GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH06104441(A)	申请公布日期	1994.04.15
申请号	JP19920013541	申请日期	1992.01.29
申请人	NEC CORP	发明人	ENJIYOU YOSHIHIRO
分类号	H01L29/43;H01L21/336;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/784;H01L29/62	主分类号	H01L29/43
代理机构		代理人
主权项
地址

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