MANUFACTURE OF LIGHT EMITTING DIODE

摘要

PURPOSE:To form a low resistance p-type ZnSe film to obtain a light emitting diode having excellent current-voltage characteristic by giving thermal treatment, under the nitrogen atmosphere, to ZnSe film to which antimony is doped using trimethy antimony. CONSTITUTION:An n-conductivity type first ZnSe layer 12 is formed on an n-type GaAs substrate 11. Next, a second ZnSe layer 13 to which antimony is added using trymethyl antimony is formed on the first ZnSe layer 12. The second ZnSe layer 13 is thermally treated under the nitrogen atmosphere 14. Finally, a negative electrode is formed in the side of n-type GaAs substrate 11 and a positive electrode in the side of the second ZnSe layer 13.