发明名称 Porous silicon as a light source for rare earth-doped CaF2 laser
摘要 A method and apparatus (242) generates intense spectral emissions (68) by associating a porous-Si layer (230) with a rare earth-doped CaF2 film (234) so that the rare earth-doped CaF2 film absorbs optical emissions (222) from the porous-Si layer (230). Circuitry (228, 244, and 238) associated with the apparatus (242 and 226) activate the porous-Si layer (230) to produce the optical emissions (222). The porous-Si layer (230) may be formed electrically, by chemical vapor deposition, or by anodizing crystalline silicon.
申请公布号 US5301204(A) 申请公布日期 1994.04.05
申请号 US19920953902 申请日期 1992.09.30
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CHO, CHIH-CHEN;DUNCAN, WALTER M.
分类号 H01L27/15;H01S3/06;H01S3/063;H01S3/07;H01S3/08;H01S3/16;H01S5/00;H01S5/026;H01S5/04;H01S5/10;H01S5/183;H01S5/32;(IPC1-7):H01S3/09 主分类号 H01L27/15
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