摘要 |
<p>The use of alternating n and p type regions asymmetrically spaced in a semiconductor material yields extremely advantageous properties. In particular, by controlling the doping level and the spatial configuration of the doped region both the device response and its optical properties are controllable. Therefore, in applications such as those involving optical switches LEDs, lasers and long wavelength detectors, both the speed of device and its optical properties are controllable. As a result, greater fabrication flexibility than previously available is possible.</p> |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH CO., NEW YORK, N.Y., US |
发明人 |
CUNNINGHAM, JOHN EDWARD, LINCROFT, NEW JERSEY 07738, US;GLASS, ALASTAIR MALCOLM, RUMSON, NEW JERSEY 07760, US;SCHUBERT, ERDMANN FREDERICK, NEW PROVIDENCE, NEW JERSEY 07974, US |