| 摘要 |
PURPOSE:To obtain a substrate excellent in mechanical strength and having a coefft. of thermal expansion close to that of a GaAs semiconductor device by adding ZrO2 powder and a sintering aid to AlN powder, compacting them and firing the resulting compact in an inert atmosphere under pressure. CONSTITUTION:A mixture prepd. by adding 45-55wt.% ZrO2 powder to AlN powder and further adding a sintering aid is formed into a prescribed shape and the resulting compact is fired in an inert atmosphere under pressure to obtain the objective substrate for mounting a GaAs semiconductor device. This substrate is an AlN-ZrN mixed sintered compact and the molar ratio of AlN: ZrN in the sintered compact is (1:2)-(4:1). The compact is preferably fired within the temp. range of 1,550-1,700 deg.C in a nitrogen atmosphere. |
