MANUFACTURE OF GAP-BASED LIGHT-EMITTING ELEMENT SUBSTRATE

摘要

PURPOSE:To provide a manufacturing method of a GaP-based light-emitting element substrate wherein a high-brightness light-emitting element can be manufactured. CONSTITUTION:A Ga solution for GaP epitaxial growth use is arranged on a GaP substrate, and an n-GaP layer is grown at a growth speed of 0.6(mum/min) while it is being doped with nitrogen. As conditions to obtain the growth speed, the layer is grown while the thickness of the Ga solution for GaP epitaxial growth use is set at, e.g. 1.7mm or higher and the temperature of a system containing the Ga solution for epitaxial growth use is being lowered at a temperature-drop speed of 2.5( deg.C/min).