| 摘要 |
(a) forming an oxide layer on a silicon substrate; (b) exposing the oxide layer by developing a photoresist film through a fixed pattern; (c) diffusing n+ impurity into the exposed silicon substrate to form an emitter region and forming an oxide silicon layer on the emitter region, simultaneously; (d) after spreading photoresist films (5) over the oxide silicon layer (2') exposing it through a condenser pattern mask, (f) etching the exposed oxide layer (2') to a fixed thickness, and (g) evaporating a metal layer on the above oxide layer.
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