发明名称 Circuit substrate comprising nitride type ceramics method for preparing it, and metallizing composition for use in it.
摘要 <p>Disclosed is: i) a ceramic substrate comprising: a nitride ceramic substrate (1); and a conductive metallized layer (2) mainly comprised of at least one of Mo and W, a group IVb active metal element and at least one metal selected from the group consisting of Co, Ni, Fe, Mn, Cr and V, formed on said substrate. ii) a ceramic substrate comprising: a nitride ceramic (1) substrate; an intermediate reactive layer mainly comprised of a compound containing a grain boundary constituent phase component of said ceramic substrate, and a compound of a group IVb active metal; and a conductive metallized layer (2) mainly comprised of at least one of molybdenum and tungsten, a nitride of a group IVb active metal and a composite compound comprising an oxide of a group IVb active metal and an oxide of Co, Ni, Fe, Mn, Cr or V, formed on said substrate with the interposition of said intermediate reactive layer. Disclosed is also a method for preparing these substrates and metallizing composition used therefor. According to this invention, a circuit substrate having a conductive metallized layer formed thereon with a high joint strength can be obtained. <IMAGE></p>
申请公布号 EP0574956(A1) 申请公布日期 1993.12.22
申请号 EP19930111133 申请日期 1988.03.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATO, HIDEKI;MIZUNOYA, NOBUYUKI;ASAI, HIRONORI;ANZAI, KAZUNO;HATANO, TSUYOSHI
分类号 C04B35/581;C04B41/51;C04B41/52;C04B41/88;C04B41/89;H01L21/48;H01L23/15;H01L23/498;H05K1/09;H05K3/38;(IPC1-7):C04B41/51;H01L21/84 主分类号 C04B35/581
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