摘要 |
<p>Disclosed is: i) a ceramic substrate comprising: a nitride ceramic substrate (1); and a conductive metallized layer (2) mainly comprised of at least one of Mo and W, a group IVb active metal element and at least one metal selected from the group consisting of Co, Ni, Fe, Mn, Cr and V, formed on said substrate. ii) a ceramic substrate comprising: a nitride ceramic (1) substrate; an intermediate reactive layer mainly comprised of a compound containing a grain boundary constituent phase component of said ceramic substrate, and a compound of a group IVb active metal; and a conductive metallized layer (2) mainly comprised of at least one of molybdenum and tungsten, a nitride of a group IVb active metal and a composite compound comprising an oxide of a group IVb active metal and an oxide of Co, Ni, Fe, Mn, Cr or V, formed on said substrate with the interposition of said intermediate reactive layer. Disclosed is also a method for preparing these substrates and metallizing composition used therefor. According to this invention, a circuit substrate having a conductive metallized layer formed thereon with a high joint strength can be obtained. <IMAGE></p> |