| 摘要 |
PURPOSE:To obtain a semiconductor device having an extremely small reverse leakage current, a low loss, high withstand voltage and high speed. CONSTITUTION:This semiconductor device is so constituted that, if the shortest distance of one-conduction type semiconductor 1 (for instance N) sandwiched by a pair of reverse conduction type semiconductor regions 6 (for instance P+) is WN, and if the depletion layer width having zero potential to be decided by specific resistance of the regions of a one-conduction type semiconductor and a reverse conduction type semiconductor is Wbi, it is to be 0<WN<=2Wbi, further, the one-conduction type semiconductor of the part to come in contact with an electrode A is made a second one-conduction type semiconductor 8 having a different resistant value from one-conduction type semiconductor of the other part. |
