| 摘要 |
<p>PURPOSE:To prevent the deterioration in the dimensional accuracy of patterns by averting the problem of resticking of the defective pattern to be corrected to the patters on the periphery at the time of correcting the defective pattern by a focused ion beam. CONSTITUTION:This method is so constituted as to include stages of removing the defective pattern 11 to be corrected first from the region parted further from the patterns 10, 10a adjacent to defective pattern 11 to be corrected and further removing the pattern toward the regions nearer the adjacent patterns 10, 10a in the case of removal of the defective pattern 11 to be removed by the focused ion beam. The method is otherwise so constituted as to include a stage of removing the defective pattern 11 to be corrected exclusive of the peripheral part near the patterns 10, 10a adjacent to this pattern and further to remove the peripheral part thereof.</p> |
