发明名称 |
Light emitting device and light emitting device package including the same |
摘要 |
Disclosed is a light emitting device including a plurality of light emitting cells disposed on a substrate, at least one connection electrode for connecting the light emitting cells, and a first insulating layer disposed between adjacent light emitting cells, wherein each of the light emitting cells includes a light emitting structure including first and second conductive type semiconductor layers and an active layer, and a reflective layer disposed on the second conductive type semiconductor layer, wherein the connection electrode connects the first conductive type semiconductor layer of a first one of the adjacent light emitting cells to the reflective layer of a second one at the adjacent light emitting cells, and wherein a first width of the second conductive type semiconductor layer is the same as or greater than a second width of the reflective layer, and the first direction differs from a thickness direction of the light emitting structure. |
申请公布号 |
US9368691(B2) |
申请公布日期 |
2016.06.14 |
申请号 |
US201514606499 |
申请日期 |
2015.01.27 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
Moon Ji Hyung;Kim Sung Kyoon;Na Min Gyu |
分类号 |
H01L33/12;H01L33/46;H01L27/15;H01L33/40;H01L33/42;H01L33/10 |
主分类号 |
H01L33/12 |
代理机构 |
KED & Associates LLP |
代理人 |
KED & Associates LLP |
主权项 |
1. A light emitting device, comprising:
a substrate; a plurality of light emitting cells disposed on the substrate; at least one connection electrode for connecting the light emitting cells; and a first insulating layer disposed between adjacent light emitting cells connected by the connection electrode, wherein each of the light emitting cells includes: a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; and a reflective layer disposed on the second conductive type semiconductor layer, wherein the connection electrode connects the first conductive type semiconductor layer of a first one of the adjacent light emitting cells to the reflective layer of a second one at the adjacent light emitting cells, and wherein a first width, in a first direction, of the second conductive type semiconductor layer is the same as or greater than a second width, in the first direction, of the reflective layer, and the first direction is different from a thickness direction of the light emitting structure. |
地址 |
Seoul KR |