ELECTROSTATIC BREAKDOWN PREREMEDY CIRCUIT OF SEMICONDUCTOR INTEGRATED CIRCUIT,申请号JP19910256673-传众专利搜索

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发明名称	ELECTROSTATIC BREAKDOWN PREREMEDY CIRCUIT OF SEMICONDUCTOR INTEGRATED CIRCUIT
摘要
申请公布号	JPH05102411(A)	申请公布日期	1993.04.23
申请号	JP19910256673	申请日期	1991.10.03
申请人	MATSUSHITA ELECTRON CORP	发明人	SAKAI TOSHIHIKO
分类号	H01L27/06;H01L21/8238;H01L27/092	主分类号	H01L27/06
代理机构		代理人
主权项
地址

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