| 摘要 |
A method of manufacturing a semiconductor device whereby a layer of material (6) is deposited on a surface (3) of a semiconductor wafer (4) from a process gas (5) in a reactor chamber (1) which is kept at a low pressure by means of a pump (2), in which method the wafer (4) is positioned parallel to a gas distribution plate (7) in the reactor chamber (1), so that a planar process space (8) is formed which has a circumferential open connection (9) with the reactor chamber (1), after which the process gas (5) is introduced into the process space (8) through inlet openings (10) in the gas distribution plate (7) while an auxiliary gas (11) is introduced into the reactor chamber (1) around the open connection (9). According to the invention, the auxiliary gas (11) is so introduced into the reactor chamber (1) that a gas pressure is realised in the open connection (9) which is practically equal to that in the process space (8). The method according to the invention achieves that the process gas (5) in the process space (8) is practically stationary, so that a "stagnant layer" is formed. The process gas (5) in the process space (8) can then be utilized substantially completely for forming the layer (6), so that little process gas (5) is used. In addition, a more uniform layer (6) is obtained owing to the stagnant process gas (5). <IMAGE> |
