| 摘要 |
PURPOSE:To make the highly precise dry-etching processing feasible for enhancing the reliability upon the devices such as wiring, capacitor, etc. CONSTITUTION:After coating a carbon film 14 on the surface of a base substance to be processed having a film 13 such as AlSiCu, etc., on the surface of a Si substrate 11 a resist 15 is formed after specific pattern on the carbon film 14 which is further patterned using the resist 15 as a mask and then the film 13 is selectively subjected to dry-etching using high density plasma as well as the carbon film 14 as a mask.
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