Plasma contamination removal process

摘要

A unique process for the removal of organic polymer photoresist and contaminants from the surface of substrates such as semiconductor wafers is disclosed. The process uses a preferred operating power to pressure ratio (where power is measured in watts per cm3 of plasma and pressure in torr) of less than about 0.150. Pressures of from 10 to 50 torr, and power input of from 200 to 500 watts per cathode can be used to minimize radiation damage to the substrate, and avoid the necessity of using remotely generated plasmas. Additionally, the process minimizes device contamination by post-strip residues (organic and/or inorganic), since only a deionized water rinse is required. Processing time is also reduced.