发明名称 PHOTOELECTROMOTIVE FORCE DEVICE
摘要 PURPOSE:To provide a photoelectromotive force device which can prevent the formation of an alloy between a metallic film which is produced in photoelectromotive force devices using amorphous silicon as their base material and n-type amorphous silicon. CONSTITUTION:In this photoelectromotive force device composed of a semiconductor having a pin junction, an n-type a-SiN film 4 or n-type a-SiC film is provided between an n-type semiconductor layer 3n and metallic film 5.
申请公布号 JPH0548129(A) 申请公布日期 1993.02.26
申请号 JP19910209309 申请日期 1991.08.21
申请人 SANYO ELECTRIC CO LTD 发明人 NOGUCHI SHIGERU;SANO KEIICHI;IWATA HIROSHI
分类号 H01L21/283;H01L29/40;H01L31/04 主分类号 H01L21/283
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