| 摘要 |
<p>PURPOSE:To remove an electrostatic destruction protective element by fusion by providing first wiring between a first pad and a node, second wiring between a second pad and the node and third wiring between the node and the signal terminal of the electrostatic destruction protective element. CONSTITUTION:A first node 132 and a first pad 14 among pads are connected by first wiring 134 between the first pad 14 and the adjacent pad 15. The first node 132 and the second pad 15 are connected by second wiring 133. The first node 132 and the signal terminal 135 of a first electrostatic destruction protective element 118 among the electrostatic destruction protective elements are connected by third wiring 136. The first pad 14 and a first I/O buffer among the I/O buffer line 13 are connected by fourth wiring. Thus, after the assembly inspection and device mounting of a semiconductor integrated circuit device, the electrostatic destruction protective element 118 connected with a signal line is removed by fusing the second wiring 133.</p> |
