| 摘要 |
PURPOSE:To effect automatic alignment by using one mask which serves as both a mask for ion implantation and a mask for a second gate formation. CONSTITUTION:A resist is applied over a second conductive film 12. This film is then patterned to form a resist mask 13 for forming a second gate electrode. The resist mask 13 is patterned in a shape matched with a first gate electrode 8. Using the resist mask 13 as a mask, ions are implanted into an operating semiconductor layer 10 through a second conductive film 12 and a second gate dielectric film 11. The region below the mask 13 turns to a channel, and regions on both sides of the channel become a source region and a drain region, respectively. Using the resist mask 13 as a mask, the second conductive film 12 is etched to form a second gate electrode 14. Automatic alignment can be achieved by using the same mask 13 in the formation of both the channel and the second gate electrode. |
