| 摘要 |
<p>PURPOSE:To regularly implant an ion beam at a fixed incident angle to a wafer centrifugally held by a rotating wafer disc. CONSTITUTION:The peripheral part of a wafer disc 1 is formed into a conical face, and a recessed part and waver base 1b for placing and receiving a wafer 2 are provided on the peripheral part inside surface. The wafer-placing surface 1c of the wafer base 1b is formed into almost the same curved surface as the comical face of the wafer disc peripheral part. When the wafer disc 1 is rotated, the wafer 2 is centrifugally pressed onto the placing surface 1c to make the wafer surface into almost the same curved surface as the conical face, and an ion beam 3 is thus regularly vertically emitted to the wafer surface.</p> |
