发明名称 |
Method of making high density semiconductor structure |
摘要 |
A method of forming a high density semiconductor structure including one or more buried metal layers. One or more metal layers may be formed on a first semiconductor substrate, with the metal layer or layers being insulated from one another and from the substrate. One or more metal layers may be formed on the surface of a second substrate which may or may not be a semiconductor substrate. The topmost metal layers, either or both of which may have an insulating layer thereon, are placed in contact and heated in an oxidizing ambient atmosphere to form a bond therebetween. One or more vias connect the buried metal layers to the active devices in the substrates. The buried metal layers may form buried power and ground planes and buried metallization patterns for device interconnection.
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申请公布号 |
US5168078(A) |
申请公布日期 |
1992.12.01 |
申请号 |
US19900631671 |
申请日期 |
1990.12.21 |
申请人 |
MCNC;NORTHERN TELECOM LIMITED |
发明人 |
REISMAN, ARNOLD;TURLIK, IWONA |
分类号 |
H01L23/48;H01L23/535 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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